The present invention is related to a superficial emitter of electrons which emits electrons from a micrometric Graphene arrangement over silicon carbide. The emitter consists in a plurality of SiC barriers which are highly close and similar and which axes are parallel therebetween, formed by self-alignment with an equidistant separation. The operation of the device at low voltage is useful for obtaining an efficient emission, which results from the quantic mechanical tunneling between the barriers of the electrons injected from the cathode contact.
Public University with 527 full time teachers, recognized by the national system of researchers (S.N.I.), with a large contribution from documents of scientific divulgation in diverse areas of knowledge and presentation of patent documents, which occupies the third place in the ranking of universities in Mexico with the largest number of patent applications
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