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Scientist from Spain · Barcelona

PhD in Electrical and Telecommunication Engineering Master of Engineering on Micro & Nanoelectronics Licenciate degree on Physics and Electrical and Electronics Engineering Studies 2013-2017 PhD in Electrical and Telecommunication Engineering UAB Escola d’Enginyeria (Cerdanyola del Vallès – Barcelona) 2013-2013 Master of Engineering in Micro & Nanoelectronics UAB Escola d’Enginyeria (Cerdanyola del Vallès – Barcelona) 2008-2012 Licenciate degree in Electrical and Electronics Engineering Facultad de Física UB (Diagonal – Barcelona) 2002-2007 Licenciate degree in Physics Facultad de Física UB (Diagonal – Barcelona) 2001-2002 (1 year) Licenciate degree in Technical Engineering in Management Computing Facultad de Informática UPC – Campus Nord (Diagonal – Barcelona) Professional Experience 2013-2017 UAB Departament d’Enginyeria Electrònica – Cerdanyola del Vallès Position: Research personnel in training Task: Research (Resistive Switching) y teaching (bachelor degrees in Computing, Electronics Engineering, Nanoscience & Nanotechnology) 2008-2010 UB Facultad de Física - Barcelona Position: Staff at Taller d’Enginyeria Electrònica i Tecnologies de la Informació (TEeTI) Task: Preparing, starting up & driving lab exercises to institute & first year bachelor degree students. April 2009 Enginycat 2009. Fira de Barcelona Position: Staff. Task: Recommending & giving information to first year bachelor degree students. Publications 1 Blasco J, Ghenzi N, Suñé J, Levy P, Miranda E. “Modeling of the Hysteretic I –V Characteristics of TiO2-based resistive switches using the generalized diode equation”. Electron Device Letters, IEEE Vol. 35, No. 3, 390-2, 2014. 2 Blasco J, Castán H, García H, Dueñas S, Suñé J, Kemell M, Kukli K, Ritala M, Leskelä M, Miranda E. “Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors”. Microelectronics Reliability, Vol. 54, No. 9-10, 1707-11, 2014. 3 Blasco J, Jančovič P, Fröhlich K, Suñé J, Miranda E. “Modeling of the switching I-V characteristics in ultrathin (5 nm) atomic layer deposited HfO2 films using the logistic hysteron”. Journal of vacuum Science & Technology B, Vol. 33, No. 1, 01A102. 2015. 4 Blasco J, Ghenzi N, Suñé J, Levy P, Miranda E. “Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films”. Microelectronics Reliability, Vol. 55, No. 1, 1-14. INTRODUCTORY INVITED PAPER. 2015. IN DEVELOPMENT: Blasco J, Castán H, García H, Dueñas S, Gonzalez M B, Campabadal F, Suñé J, Miranda E, “Preisach-like modeling of multilevel conduction in bipolar resistive switching devices”, 2017. Computering Intermediate-high level knowledge of: • Matlab • Origin • PSPICE • Mentor Graphics: DxDesigner, Expedition PCB, Analog Hyperlynx. • MPLABX • Programming Languages: Fortran, C, Quartus II ALTERA. • Text processor: Microsoft Word • Hojas de Cálculo: Excel • Presentation: Power Point • Gnuplot • Arduino • PCAD • PSPICE Languages Spanish: Native Catalan: Native English: High Level